FMM5815X 17.5-20ghz power amplifier mmic item symbol drain voltage v dd 10 v gate voltage v gg -3.0 v input power p in 22 dbm c storage temperature -65 to +175 t stg condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the long term reliable operation of gaas fets: 1. the drain-source operating voltage (v dd ) should not exceed 6 volts. 2. the forward and reverse gate currents should not exceed 4 and -0.39 ma respectively. 3. this product should be hermetically packaged operating backside temperature -65 to +85 c t op 1 edition 1.0 june 2001 item symbol output return loss rlout conditions unit limits typ. max. min. electrical characteristics (ambient temperature tc=25 c) power gain at 1 db g.c.p. 19 21 24 - -8 - db - 700 950 ma input return loss rlin i ddrf -- -12 db db 3rd order intermodulation distortion im 3 - -40 -37.0 dbc frequency range f 17.5 - 20.0 ghz output power at 1 db g.c.p. 29.5 31 - dbm p 1db g 1db g.c.p.: gain compression point s.c.l.: single carrier level power-added efficiency drain current -30- % add v dd = 6v i dd = 600ma (typ.) z s = z l = 50 ? ? f=10mhz, 2-tone test, pout=20dbm s.c.l. note 2: electrical characteristic is specified on rf-probe measurements note 1: rf parameter sample size 10pcs. criteria (accept/reject)=(0/1) description the FMM5815X is a high-gain, high linearity, 3-stage mmic amplifier designed for operation in the17.5-20.0 ghz frequency range. this amplifier has an input and output designed for use in 50 ? systems.this device is well suited for point-to-point communication applications. features ?high output power: p 1db = 31dbm (typ.) ?high gain: g 1db = 21db (typ.) ?high pae: add = 30% (typ.) ?impedance matched zin/zout = 50 ? ?0.25 m phemt technology
FMM5815X 17.5-20ghz power amplifier mmic 2 im3 vs. output power 21 17 19 23 25 27 29 -55 -60 -50 -45 -40 -35 -30 -25 -20 total output power (dbm) im3 (dbc) vdd = 6v idd(dc) = 600ma p1db & g1db vs. frequency 18.5 17.5 18.0 19.0 19.5 20.0 16 20 24 28 32 36 40 24 40 56 72 88 104 120 frequency (ghz) p1db(dbm), g1db(db) vdd = 6v idd(dc) = 600ma p1db output power vs. input power 0 -4 4 8 12 15 19 23 27 31 35 0 20 40 total input power (dbm) total output power (dbm) add (%) add (%) vdd = 6v idd(dc) = 600ma pout add g1db add 17.5ghz 18.0ghz 20.0ghz 17.5ghz 18.0ghz 20.0ghz
FMM5815X 17.5-20ghz power amplifier mmic 3 220pf 220pf 220pf 220pf vdd rf out 0.15f vgg 0.15f rf in vdd 0.15f chip size: 3.57mm x 2.76mm assembly drawing s-parameters v dd = 6v, i ds = 600ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 16500 .357 47.0 10.785 -44.4 .004 -51.8 .110 -20.6 17000 .385 19.3 12.059 -80.4 .005 -42.8 .111 -93.5 17500 .443 -10.5 13.360 -117.3 .005 -62.5 .169 -134.6 18000 .512 -39.3 14.483 -156.9 .007 -83.0 .205 -166.6 18500 .566 -66.7 14.782 161.9 .007 -95.1 .220 164.9 19000 .572 -92.9 14.585 120.3 .005 -112.5 .178 137.0 19500 .538 -117.9 13.693 78.7 .005 -142.9 .121 108.3 20000 .459 -144.7 13.188 37.1 .003 94.6 .051 53.6 20500 .346 165.1 12.600 -10.4 .005 33.8 .044 19.8 21000 .307 74.2 11.066 -65.4 .006 -10.5 .080 11.4
4 FMM5815X 17.5-20ghz power amplifier mmic for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu quantum devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 2001 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0601m200 chip outline 0 3570 chip size: 3570m x 2760m chip thickness: 70m pad dimensions: 1. dc pad: 80m x 80m vdd: 100m x 100m 2. rf pad: 120m x 80m 1194 2555 2640 2760 0 0 2760 rf in rf out 0 vdd5 3075 3450 120 vdd4 120 205 280 620 vdd1 1155 2380 1380 2510 250 vdd2 3570 3075 750 vdd3 636 1155 750 vgg2 2380 vgg1 unit: m fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not ingest. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
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